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MONOCRYSTALLINE SILICON INGOTS AND WAFERS

Monocrystalline Silicon Ingots
Ingot SPEC Growth
method
Dopant Resistivity
(Ω.cm)
Oxygen Concentration
(atoms/cm3)
Carbon
Concentration
(atoms/cm3)
P CZ Boron 0.5~3, 3~6 ≦1X1018 ≦5X1016
N CZ Phos 0.5~3, 0.6~3.5 ≦0.95X1018 ≦5X1016
Ingot SPEC Dislocation
(Etch Pit Density) (/cm2)
Lifetime
(μs)
Crystal Orientation
(Degree)
Diameter
(mm)
Ingot Length
(mm)
P ≦3000 ≧15 <100>±3 100.0~200.0 100~1300
N ≦3000 ≧100 <100>±3 100.0~200.0 100~1300
Monocrystalline Silicon Wafers
Growth method CZ Lifetime (μs)
(μs)
P:≧15
N:≧100
Type P / N Dislocation
(Etch Pit Density) (/cm2)
≦3000
Dopant Boron / Phos Length of a Side
(mm)
Φ6":125±0.5
Φ6.5":125±0.5
Φ8":156±0.5
Crystal Orientation
(Degree)
<100>±3 Length of Diagonal Line
(mm)
Φ6":150±0.5
153±0.5
Φ6.5":165±0.5
Φ8":200±0.5
Resistivity
(Ω.cm)
P: 0.5~3, 3~6
N: 0.5~3, 0.6~3.5
Thickness
(μm)
180±20
Oxygen Concentration
(atoms / cm3)
P:≦1X1018
N:≦0.95X1018
TTV
(μm)
≦30
Carbon Concentration
(atoms / cm3)
≦5X1016 Bow
(μs)
≦40